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CBSE Physics Solids and Semiconductor Devices Test 1 Online

Test Name	Solids and Semiconductor Devices Test
Subject	CBSE Physics
Test Type	MCQs
Total Question	25
Total Marks	50
Total Time	20 Minutes
Test Help For	CBSE Physics. CBSE Board Exams. Entrance Exams. Admissions Test. Jobs Test. General Knowledge. All Grades Exams.

CBSE has been at the forefront of the progress in the educational field in all India. In his boards exams chapters Physics topic of Solids and Semiconductor Devices read officially as they manage exams of it’s. Solids and Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum. For boost your knowledge mostly helpful questions answers Mcqs test available for take practice online.

CBSE Physics Solids and Semiconductor Devices Test 1 Online

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1. If internal resistance of cell is negligible, then current flowing through the circuit is ?

5/50 A

2/50 A

4/50 A

3/50 A

Question 1 of 25

2. In forward bias the width of depletion layer in a p-n junction diode ?

Increases

Decreases

First increases then decreases

Remains constant

Question 2 of 25

3. Which of the following when added as an impurity into silicon produces n-type semiconductor ?

Question 3 of 25

4. In a junction diode, the holes are die to ?

Missing electrons

Neutrons

Protons

Extra electrons

Question 4 of 25

5. Depletion layer consists of ?

Mobile charge carriers

Electrons

Immobile ions

Protons

Question 5 of 25

6. Sodium has body centered packing. If the distance between two nearest atoms is 3.7 A°, then the lattice parameter is ?

3.9 A°

3.3 A°

4.3 A°

4.8 A°

Question 6 of 25

7. The following circuit represents ?

OR gate

AND gate

XOR gate

NAND gate

Question 7 of 25

8. For conduction in a p-n junction, the basing is ?

Undetermined

Same potential on on both p and n-sides

High potential on p-side and low potential on n-side

High potential on n-side and low potential on p-side

Question 8 of 25

9. The truth table given below

represents ?

NAND gate

AND gate

OR gate

NOR gate

Question 9 of 25

10. Which one of the following gates will have an output of 1 ?

Question 10 of 25

11. The correct relationship between the two current gains α and β in a transistor is ?

β = 1+ α/β

α = β/1-β

β = α/1+α

α = β/1+β

Question 11 of 25

12. The cause of the potential barrier in a p-n diode is ?

Concentration of positive and negative charges near the junction

Concentration of positive charges near the junction

Depletion of negative charges near the junction

Depletion of positive charges near the junction

Question 12 of 25

13. In a common-base configuration of a transistor Δic/Δic = o.98, then current gain in common emitter configuration of transistor will be ?

24.5

4.9

Question 13 of 25

14. Si and Cu are cooled to a temperature of 300 K, then resistivity ?

For Cur increases and for Si decreases

Fro Si increases and for Cur decreases

Decreases for both Si and Cu

Increase for both Si and Cu

Question 14 of 25

15. For a given circuit of ideal p-n junction diode, which of the following is correct ?

In reverse biasing the voltage across R is 2V

In revere biasing the voltage across R is V

In forward biasing the voltage across R is 2V

In forward biasing the voltage across R is V

Question 15 of 25

16. The following truth table belongs to which of the following four gates ?

NAND

XOR

NOR

Question 16 of 25

17. In p-type semiconductor, the majority charge carriers are ?

Neutrons

Holes

Protons

Electrons

Question 17 of 25

18. For a transistor ic/ie = 0.96, the current gain in common-emitter configuration is ?

Question 18 of 25

19. In bcc structure of lattice constant α, the minimum distance between atoms is ?

α/2

√3/2 α

α/√2

√2α

Question 19 of 25

20. The transfer ratio of a transistor is 50. The input resistance of the transistor when used in the common emitter configuration is 1 k. The peak value of the collector AC current for an AC input voltage of 0.01 V peak is ?

100 μA

0.01 μA

500 μA

0.25 μA

Question 20 of 25

21. The number atoms per unit cell in bcc lattice is ?

Question 21 of 25

22. A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be ?

A p-n junction

An intrinsic semiconductor

an n-type semiconductor

A p-type semiconductor

Question 22 of 25

23. If α and β are current gains in common-base and common-emitter configurations of a transistor then β is equal to ?

1/α

α/1 + α

α/1 - α

α - 1/α

Question 23 of 25

24. Barrier potential of a p-n junction diode does not depend on ?

Doping density

Diode design

Forward bias

Temperature

Question 24 of 25

25. Following diagram performs the logic function of ?

AND gate

NAND gate

OR gate

XOR gate

Question 25 of 25

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Test By Subject	CBSE
Test By Topics	Solids and Semiconductor Devices

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2021-01-17

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CBSE Physics Solids and Semiconductor Devices Test 1 Online

CBSE Physics Solids and Semiconductor Devices Test 1 Online

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