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1. For a given circuit of ideal p-n junction diode, which of the following is correct ?

In reverse biasing the voltage across R is 2V

In forward biasing the voltage across R is V

In forward biasing the voltage across R is 2V

In revere biasing the voltage across R is V

Question 1 of 25

2. The correct relationship between the two current gains α and β in a transistor is ?

β = 1+ α/β

α = β/1-β

β = α/1+α

α = β/1+β

Question 2 of 25

3. Depletion layer consists of ?

Immobile ions

Electrons

Mobile charge carriers

Protons

Question 3 of 25

4. Sodium has body centered packing. If the distance between two nearest atoms is 3.7 A°, then the lattice parameter is ?

4.8 A°

3.3 A°

4.3 A°

3.9 A°

Question 4 of 25

5. Which one of the following gates will have an output of 1 ?

Question 5 of 25

6. Si and Cu are cooled to a temperature of 300 K, then resistivity ?

Decreases for both Si and Cu

For Cur increases and for Si decreases

Increase for both Si and Cu

Fro Si increases and for Cur decreases

Question 6 of 25

7. In forward bias the width of depletion layer in a p-n junction diode ?

Remains constant

First increases then decreases

Decreases

Increases

Question 7 of 25

8. In a junction diode, the holes are die to ?

Neutrons

Protons

Extra electrons

Missing electrons

Question 8 of 25

9. In bcc structure of lattice constant α, the minimum distance between atoms is ?

√3/2 α

α/2

α/√2

√2α

Question 9 of 25

10. A semiconducting device is connected in a series in circuit with a battery and a resistance. A current is allowed to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be ?

A p-n junction

an n-type semiconductor

An intrinsic semiconductor

A p-type semiconductor

Question 10 of 25

11. If internal resistance of cell is negligible, then current flowing through the circuit is ?

4/50 A

5/50 A

2/50 A

3/50 A

Question 11 of 25

12. The following truth table belongs to which of the following four gates ?

XOR

NOR

NAND

Question 12 of 25

13. The number atoms per unit cell in bcc lattice is ?

Question 13 of 25

14. For conduction in a p-n junction, the basing is ?

High potential on p-side and low potential on n-side

Undetermined

Same potential on on both p and n-sides

High potential on n-side and low potential on p-side

Question 14 of 25

15. For a transistor ic/ie = 0.96, the current gain in common-emitter configuration is ?

Question 15 of 25

16. The truth table given below

represents ?

AND gate

NOR gate

NAND gate

OR gate

Question 16 of 25

17. If α and β are current gains in common-base and common-emitter configurations of a transistor then β is equal to ?

α/1 - α

α/1 + α

1/α

α - 1/α

Question 17 of 25

18. In a common-base configuration of a transistor Δic/Δic = o.98, then current gain in common emitter configuration of transistor will be ?

24.5

4.9

Question 18 of 25

19. The cause of the potential barrier in a p-n diode is ?

Concentration of positive charges near the junction

Depletion of negative charges near the junction

Depletion of positive charges near the junction

Concentration of positive and negative charges near the junction

Question 19 of 25

20. Following diagram performs the logic function of ?

XOR gate

AND gate

OR gate

NAND gate

Question 20 of 25

21. In p-type semiconductor, the majority charge carriers are ?

Holes

Protons

Neutrons

Electrons

Question 21 of 25

22. Barrier potential of a p-n junction diode does not depend on ?

Temperature

Doping density

Diode design

Forward bias

Question 22 of 25

23. Which of the following when added as an impurity into silicon produces n-type semiconductor ?

Question 23 of 25

24. The following circuit represents ?

OR gate

NAND gate

AND gate

XOR gate

Question 24 of 25

25. The transfer ratio of a transistor is 50. The input resistance of the transistor when used in the common emitter configuration is 1 k. The peak value of the collector AC current for an AC input voltage of 0.01 V peak is ?

100 μA

500 μA

0.01 μA

0.25 μA

Question 25 of 25

Test Name	Solids and Semiconductor Devices Test
Subject	CBSE Physics
Test Type	MCQs
Total Question	25
Total Marks	50
Total Time	20 Minutes
Test Help For	CBSE Physics. CBSE Board Exams. Entrance Exams. Admissions Test. Jobs Test. General Knowledge. All Grades Exams.

Test By Subject	CBSE
Test By Topics	Solids and Semiconductor Devices

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CBSE Physics Solids and Semiconductor Devices Test 1 Online

CBSE Physics Solids and Semiconductor Devices Test 1 Online

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