CBSE Physics Solids And Semiconductor Devices Test Online
Home / Tests / CBSE Physics Solids and Semiconductor Devices Test Online

CBSE Physics Solids and Semiconductor Devices Test Online

Test Name Solids and Semiconductor Devices Test
Subject CBSE Physics
Test Type MCQs
Total Question 25
Total Marks 50
Total Time 20 Minutes
Test Help For
  • CBSE Physics.
  • CBSE Board Exams.
  • Entrance Exams.
  • Admissions Test.
  • Jobs Test.
  • General Knowledge.
  • All Grades Exams.

CBSE has been at the forefront of the progress in the educational field in IndiaSolids and Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum. In this topic test we provided best choices question answers for improve our students vocabulary level.

CBSE Physics Solids and Semiconductor Devices Test Online


1. When arsenic is added as an impurity to silicon the resulting material is ?

Question 1 of 25

2. The current gain for a transistor working as common base amplifier is 0.96. If the emitter current is 7.2 mA, then the base current is ?

Question 2 of 25

3. When a p-n junction diode is reverse biased the flow of current across the junction is mainly due to ?

Question 3 of 25

4. At absolute zero, Si acts as ?

Question 4 of 25

5. When a n-p-n transistor is used as an amplifier, then ?

Question 5 of 25

6. Which one of the following is the weakest kind of the bonding in solids ?

Question 6 of 25

7. In figure the input is across the terminals A and C and the output is across B and D. Then the output is ?

Question 7 of 25

8. Which of the following gates corresponds to the truth table given below ?

Question 8 of 25

9. Radiowaves of constant amplitude can be generated with ?

Question 9 of 25

10. An oscillator is nothing but an amplifier with ?

Question 10 of 25

11. A piece of copper and other of germanium are cooled form the room temperature to 80 K, then ?

Question 11 of 25

12. For amplification by a triode the signal to be amplified is given to ?

Question 12 of 25

13. The part of the transistor which is heavily doped to produce large number of majority carriers is ?

Question 13 of 25

14. Which of the following, when added as an impurity, into the silicon, produces n-type semiconductor ?

Question 14 of 25

15. In a common base amplifier the phase difference between the input single voltage and the output voltage is ?

Question 15 of 25

16. p-n junction is said to be forward biased, when ?

Question 16 of 25

17. The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 milliwatt. What should be teh value of the resistor R, connected in series with the diode, for obtaining maximum current i ?

Question 17 of 25

18. The depletion layer in the p-n junction region is caused by ?

Question 18 of 25

19. Diamond is very hard because ?

Question 19 of 25

20. To use a transistor as an amplifier ?

Question 20 of 25

21. When n-type semiconductor is heated ?

Question 21 of 25

22. For an electronic valve, the plate current i and plate voltage V in the space charge limited region are related as ?

Question 22 of 25

23. When a triode is used as an amplifier the phase difference between the input signal voltage and the out put is ?

Question 23 of 25

24. The following truth table corresponds to the logical gate ?

Question 24 of 25

25. To obtain a p-type germanium semiconductor, it must be doped with ?

Question 25 of 25


Test By Subject
Test By Topics
Have any Problem or Error please mention in below comments section.

Leave a Reply

Your email address will not be published. Required fields are marked *